固體中的介電弛豫 pdf epub mobi txt 電子書 下載2025

想要找書就要到 小美書屋

立刻按 ctrl+D收藏本頁

你會得到大驚喜!!

《固體中的介電弛豫(影印版)》是研究固體中介電弛豫現象的專著，被電介質領域的許多研究者奉為經典。作者提齣在所有固體介質中存在普適的分數指數弛豫定律，其觀點在學術界經曆瞭從不被理解到廣泛接受的麯摺過程。書中介紹瞭介質極化的基礎知識和介電函數的錶述方法，在此基礎上討論瞭幾種理想化模型的的動態響應特徵，結閤頻域響應和時域響應的多種實驗現象，總結提齣瞭介電弛豫的多體普適模型。

《固體中的介電弛豫(影印版)》行文流暢、簡明扼要，可作為物理、電子、材料、電氣等相關專業的教師、研究生和科研人員的參考書。精讀此書有助於深入、全麵地理解電介質、半導體、電池及其他電子元器件測量中的實驗結果。

A．K．瓊剋，(A．K．Jonscher，1922—2005)，生於波蘭華沙，1949年在倫敦大學瑪麗皇後學院以一級榮譽學士學位畢業，並在該校Harry Tropper教授的指導下於1952年獲得博士學位，1951年起在GEC研究實驗室工作，從事半導體器件物理原理方麵的研究工作，1962年以Reader身份加入倫敦大學切爾西學院，1965年成為固態電子學教授，1987年成為倫敦大學皇傢霍洛威與貝德福德斯學完榮譽教授，1990年受邀擔綱IEEE“普適介電響應”傑齣懷特海榮譽講席。瓊剋教授在介電弛豫研究方麵具有很深的造詣，他於1983年和1996年分彆齣版的學術專著《固體中的介電弛豫》和《普適弛豫定律》，在國際學術界享有盛譽。

PrefaceUseful Physical ConstantsChapter 1INTRODUCTION 1.1 Dielectrics and insulators 1.2 The nature of dielectric response 1.3 The purpose and scope of the present treatment References to Chapter 1Chapter 2 THE PHYSICAL AND MATHEMATICAL BASIS OF DIELECTRIC POLARISATION 2.1 Charges, dipoles and chemical bonds 2.2 Dielectric polarisation 2.3 Polarisation in static electric fields a) Orientational polarisation - freely floating dipoles b) Molecular polarisability - induced dipole moment c) Orders of magnitude of dipole moments and polarisabilities d) Polarisation by hopping charge carriers 2.4 Effect of particle interactions 2.5 Time-dependent dielectric response 2.6 Frequency-domain response 2.7 Permittivity, conductivity and loss 2.8 Kramers-Kronig relations Appendix 2.1 Fourier transform of the convolution integral Appendix 2.2 Computer programs for Kramers-Kronig transformation C--* G and G--* C References to Chapter 2Chapter 3 PRESENTATION OF DIELECTRIC FUNCTIONS 3.1 Introduction 3.2 Admittance, impedance, permittivity 3.3 More complicated equivalent circuits i) Series R-C in parallel with C~ ii) Resistance in series with parallel G--C combination iii) Capacitance in series with parallel G--C combination iv) Two parallel circuits in series v) Distributed R-C line 3.4 Summary of simple circuit responses 3.5 Logarithmic impedance and admittance plots 3.6 The response of a "universal" capacitor 3.7 Representation in the complex permittivity plane 3.8 Representation of the temperature dependence Appendix 3.1 Time domain, rotating vectors and frequency domain Appendix 3.2 Inversion in the complex plane References to Chapter 3Chapter 4 THE DYNAMIC RESPONSE OF IDEALISED PHYSICAL MODELS 4.1 Introduction 4.2 The harmonic oscillator 4.3 An inertialess system with a restoring force 4.4 Free charge carriers with collisions 4.5 Dipoles floating in a viscous fluid 4.6 Charge hopping between two potential wells 4.7 Dielectric phenomena in semiconductors i) Semiconductor materials ii) Schottky barriers and p-n junctions iii) Charge generation~recombination processes iv) Trapping phenomena 4.8 Diffusive transport 4.9 Concluding comments Appendix 4.1 The complex susceptibility of an inertialess system with a restoring force Appendix 4.2 Relaxation of "free" charge References to Chapter 4Chapter 5 EXPERIMENTAL EVIDENCE ON THE FREQUENCYR ESPONSE 5.1 Introduction 5.2 Near-Debye responses 5.3 Broadened and asymmetric dipolar loss peaks a) Polymeric materials b) Other dipolar systems c) Dipolar response at cryogenic temperatures d) Characterisation of dielectric loss peaks 5.4 Dielectric behaviour of p-n junctions 5.5 Dielectric response without loss peaks a) Charge carriers in dielectric materials b) Alternating current conductivity of hopping charges c) Fast ionic conductors 5.6 Strong low-frequency dispersion 5.7 Frequency-independent loss 5.8 Superposition of different mechanisms 5.9 Survey of frequency response information References to Chapter 5Chapter 6 EXPERIMENTAL EVIDENCE ON THE TIME RESPONSE 6.1 The role of time-domain measurements 6.2 The significance of loss peaks in the time--domain 6.3 The Hamon approximation 6.4 Evidence for inertial effects 6.5 Long-time behaviour in low-loss polymers 6.6 Detection on non-linearities by time--domain measurements 6.7 Contribution of charge carriers to the dielectric response 6.8 Other charge carrier phenomena a) Charge injection and surface potential b) Energy loss arising from the movement of charges c) Dispersive charge flow d) Charge carrier systems with strong dispersion 6.9 Conclusions regarding time--domain evidence a) The presence to two power laws b) The temperature dependence of the universal law c) Limiting forms of response at "zero" and "infinite" times d) The Debye "singularity" e) Time--domain response of the polarisation Appendix 6.1 The minimum duration of charging and discharging Appendix 6.2 Time-domain relaxation and dc conductivity References to Chapter 6Chapter 7 PREVIOUSLY ACCEPTED INTERPRETATIONS 7.1 Introduction 7.2 Distributions of relaxation times (DRT's) 7.3 Distributions of hopping probabilities 7.4 Correlation function approaches 7.5 Local field theories 7.6 Diffusive boundary conditions 7.7 Interracial phenomena and the Maxwell-Wagner effect 7.8 Transport limitation at the boundaries 7.9 The need for an alternative approach References to Chapter 7Chapter 8 THE MANY-BODY UNIVERSAL MODEL OF DIELECTRIC RELAXATION 8.1 The conditions for the occurrence of the universal response 8.2 A descriptive approach to many-body interaction a) The screened hopping model b) The role of disorder in the dielectric response c) The correlated states d) "Large" and "small" transitions 8.3 The infra-red divergence model a) The inapplicability of exponential relaxation in time b) Physical concepts in infra-red divergence c) The Dissado-Hill model of "large" and "small" transitions d) The small flip transitions e) Fluctuations or flip-flop transitions f) The complete analytical development of relaxation 8.4 The consequences of the Dissado-Hill theory a) The significance of the loss peak b) The temperature dependence of the loss peak c) Dipole alignment transitions d) The exponents m and n e) The temperature dependence of the "flat" loss f) The narrow range of ac conductivities 8.5 Clustering and strong low-frequency dispersion 8.6 Energy relations in the many-body theory a) Stored energy in the static and transient regimes b) Transfer of energy to the heat bath c) Dielectric and mechanical loss 8.7 The dynamics of trapping and recombination in semiconductors 8.8 Dielectric diagnostics of materials 8.9 Conclusions Appendix 8.1 The infra-red divergence References to Chapter 8Author IndexSubject index
· · · · · · (收起)