Foreword Hiroshi IwaiIntroduction Wladek Grabinski, Bart Nauwelaers and Dominique Schreurs12/3-D process and device simulation. An effective tool for better understanding of internal behaviorof semiconductor structuresDaniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno2PSP: An advanced surface-potential-based MOSFET modelR. van Langevelde, and G. Gildenblat3EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model for next generation CMOSMatthias Bucher, Antonios Bazigos, Francois Krummenacher,Jean-Micehl Sallese, and Christian Enz4Modelling using high-frequency measurementsDominique Schreurs5Empirical FET modelsIltcho Angelov6Modeling the SOI MOSFET nonlinearities.An empirical approachB. Parvais, A. Siligaris7Circuit level RF modeling and designNobuyuki Itoh8On incorporating parasitic quantum effects in classical circuit simulationsFrank Felgenhauer, Maik Begoin and Wolfgang Mathis9Compact modeling of the MOSFET in VHDL-AMSChristophe Lallement, Francois Pecheux, Alain Vachoux and Fabien Pregaldiny10Compact modeling in Verilog-ABoris Troyanovsky, Patrick O'Halloran and Marek MierzwinskiIndex
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